发明名称 |
Method for processing the surface of an insulating article |
摘要 |
A surface processing method for processing the surface of an insulating article in which an ion-implanted surface-modified layer is effectively formed on the article 2. In surface processing the article 2 of an insulating material, an electrically conductive thin metal film 50 is first formed on the article surface. A pulsed voltage containing a positive pulsed voltage and a negative pulsed voltage is applied to the article in a plasma containing ions to be implanted to implant ions in the article surface. This implants ions at right angles to the article surface to generate a surface-modified layer 51. There is no possibility of the article 2 being charged up due to application of a pulsed voltage.
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申请公布号 |
US6447849(B1) |
申请公布日期 |
2002.09.10 |
申请号 |
US20000598308 |
申请日期 |
2000.06.21 |
申请人 |
SONY CORPORATION |
发明人 |
WATANABE SEIICHI;SHINOZAKI KENJI;KOHNO MINORU;MITSUHASHI HIROYUKI;TONOSAKI MINEHIRO;KOBAYASHI MASATO |
分类号 |
B41J2/16;C23C14/48;G11B5/84;G11B7/26;H01J37/32;(IPC1-7):C23C14/12 |
主分类号 |
B41J2/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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