发明名称 |
Multiple active layer structure and a method of making such a structure |
摘要 |
An integrated circuit includes multiple active layers. Preferably, a semiconductor-on-insulator (SOI) or silicon-on-insulator wafer is utilized to house a first active layer. A second active layer is provided above an insulative layer above the SOI substrate. Solid phase epitaxy can be used to form the second active layer. Subsequent active layers can be added by a similar technique. A seeding window can also be utilized.
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申请公布号 |
US6429484(B1) |
申请公布日期 |
2002.08.06 |
申请号 |
US20000633208 |
申请日期 |
2000.08.07 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
YU BIN |
分类号 |
H01L21/822;H01L27/06;(IPC1-7):H01L27/01;H01L27/12;H01L31/039 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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