发明名称 CHARGE PUMP CIRCUIT AND OPERATING METHOD FOR NON- VOLATILE MEMORY USING IT
摘要 PURPOSE: To solve such a problem that a conventional charge pump circuit for generating both positive and negative voltages can generates both positive and negative voltages, but a desired high voltage output cannot be obtained. CONSTITUTION: This circuit is provided with a first back-current preventing circuit connected between an external power source and a first internal node, a first output node connected to the first internal node and outputting a first output potential, a second back-current preventing circuit connected between a second power source node receiving a ground potential and a second internal node, a second output node connected to the second internal node and outputting a second output potential, and a voltage generating circuit connected between the first internal node and the second internal node and raising a potential of the second internal node to a higher potential than a potential of the first internal node. Further, the circuit comprises diode elements provided so that a current is made to flow from the first internal node to the second internal node, and capacitors of which one side of electrodes is connected to the first, second internal nodes and in which a clock signal is given to the other electrode, and they are formed on/in a semiconductor substrate.
申请公布号 KR20020060051(A) 申请公布日期 2002.07.16
申请号 KR20010075626 申请日期 2001.12.01
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 ISHII MOTOHARU;OMOTO KAYOKO
分类号 G11C16/06;G11C5/14;G11C16/30;H01L21/822;H01L27/04;(IPC1-7):G11C5/14 主分类号 G11C16/06
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