| 摘要 |
<p>A method for forming a silicon oxide film, a silicate glass film or the like by the high density plasma-CVD process, wherein use is made of a film forming temperature of 400 DEG C to 680 DEG C, preferably of 400 DEG C to 600 DEG C, more preferably 450 DEG C to 550 DEG C. The method can be employed for suppressing the plasma induced damage while suppressing the enlargement of contact holes due to a treatment with hydrofluoric acid which is a pretreatment prior to the padding of a material to be padded after the formation of contact holes, to thereby improve the reliability of the film.</p> |
