| 摘要 |
PURPOSE: An isolation method for a semiconductor device is provided to control an inverse narrow width effect by making the upper corner of a trench round, and to reduce stress by making the lower corner of the trench round. CONSTITUTION: A mask layer having an opening exposing an isolation region is formed on a semiconductor substrate(20) to define the isolation region and an active region. A predetermined depth of the substrate not protected by the mask layer is eliminated to form the trench. A wet oxidation process is performed at a low temperature regarding a part of the exposed substrate and the inner surface of the trench to form the first oxide layer. The first oxide layer is removed by a wet etch process. The lower surface of the trench is covered with a passivation layer. A dry oxidation process is performed at a high temperature regarding the substrate on the inner surface of the exposed trench to form the second oxide layer. An insulation material is filled in the trench, and the etch mask is removed.
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