| 摘要 |
PROBLEM TO BE SOLVED: To provide a capacitor of a semiconductor element, having a TaON dielectric film capable of reducing a leakage current, while assuring high capacitance. SOLUTION: A method for manufacturing the capacitor of the semiconductor element comprises a step of vapor depositing a Ta metal film 28 on a semiconductor substrate 20, a step of crystallizing the Ta metal film 28, a step of forming a lower electrode 30 by patterning a prescribed part of the film 28, a step of forming the TaON film on the electrode 30, a step of forming an upper electrode 34 on the TaON film 32. |
