| 摘要 |
<p>A polishing compound for polishing semiconductor device containing water, fine particles of an abrasive material and a chelating agent, characterized in that the abrasive material comprises cerium oxide, the cerium oxide particles have an average particle diameter of 0.01 to 1.0 ν, and the polishing compound exhibits a selection ratio, i.e. a ratio of an abrasion speed for a silicon dioxide film to that for a silicon nitride film of 10 or more. The polishing compound has high controllability, can undergo flattening polishing, causes reduced flaws on a surface and is good in the capability of abrasive grains being washed from a wafer after polishing, due to its having a selection ratio as high as 10, and thus is suitably used as a polishing compound for a semiconductor device for use in polishing an oxide film for practicing the Shallow Trench Isolation method.</p> |
