A method of depositing silicon oxynitride polimer layers

摘要

The invention relates to a method of depositing polymeric layers of silicon oxynitride onto a surface of a semiconductor material substrate by a CVD (Chemical Vapor Deposition) technique using at least one chemical precursor. The innovative aspect lies essentially in that an organosilane is used as a chemical precursor. More particularly, the organosilane comprises a combination of silicon (Si), nitrogen (N), carbon (C) and hydrogen (H).