DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To precisely measure and control the temperature of a wafer. SOLUTION: A wafer manufacturing device 100 has a process chamber 101, a chuck installed to the chamber 101 for retaining a wafer 140, and a pedestal 102 which is positioned at an interval from the chuck. A first gas layer is supplied to the space between the chuck and wafer 140 and a second gas layer is supplied to the space between the pedestal 102 and chuck. The pressure of the first gas layer is controlled within a certain pressure range and the thermal conductivity of the first gas layer is fixed against the pressure fluctuation of the first gas layer in the pressure range. The pressure of the second gas layer is controlled so as to control the quantity of heat transferred to the pedestal 102.