| 摘要 |
PURPOSE: A method for making a capacitor of a semiconductor device is provided to prevent a misalignment between a storage electrode and a contact hole, by forming the storage electrode and the contact by using a photoresist pattern used for a contact mask. CONSTITUTION: The first interfacial insulating layer(19) is formed on a semiconductor substrate(11). The second interfacial insulating layer is formed on the first interfacial insulating layer, and is made of an insulation material having an etching selection ratio difference with the first interfacial insulating layer. The second interfacial insulating layer, the first interfacial insulating layer and the lower insulating layer(17) are etched to form a storage electrode contact hole exposing an impurity junction area. The second interfacial insulating layer is side-etched by a predetermined thickness due to the etching selection ratio difference. A conductive material filling a lower insulating layer of the storage electrode contact hole is formed. An insulating layer filling the interfacial insulating layer of the storage electrode contact hole is formed. The insulating layer and the conductive material are smoothing-etched, the insulating layer for filling the contact hole is removed, thereby forming a cylinder-type storage electrode.
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