| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce production cost, improve production efficiency and obtain a method of manufacturing an a-Si based thin-film optoelectronic transducer device having a satisfactory performance, by forming an a-SiGe thin film having a high film quality with high film forming rate. SOLUTION: In this method, an a-SiGe thin film, contained in an i-type amorphous optoelectronic transducer layer 112 of an a-Si based thin-film optoelectronic transducer device, is formed under conditions in which a material gas containing a silane-based gas and a germanium-based gas and a diluting gas containing hydrogen are used as the main components of a gas introduced into a reaction chamber. The ratio of the flow rate of the dilution gas to that of the material gas is made 30 times or higher and 50 times or lower. The pressure in the reaction chamber is set to 3 Torrs or higher and 20 Torr or lower.</p> |
