| 摘要 |
PCT No. PCT/JP97/01378 Sec. 371 Date Jul. 2, 1998 Sec. 102(e) Date Jul. 2, 1998 PCT Filed Apr. 22, 1997 PCT Pub. No. WO97/40533 PCT Pub. Date Oct. 30, 1997In manufacturing a CVD film (interlayer insulating film or passivation film) using material gases containing a gas having Si-H combination, the amount of Si-H combination in the CVD film (12, 31, 32, 33, 34, 47, 48, 49, 57, 59) is set to 0.6x1021cm-3 or less to thereby suppress the formation of electron traps in the gate oxide film or tunnel oxide film and prevent variations in the threshold of transistors. In addition, the moisture resistance can be improved by setting the refractive index of the CVD film to 1.65 or more or by setting the concentration of nitrogen in the CVD film to 3x1021cm-3 or more.
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