| 摘要 |
PROBLEM TO BE SOLVED: To reduce electric capacity of a semiconductor laser device. SOLUTION: In the device, there is formed proton implanted parts 34 that reaches a first clad layer 12 by penetrating a contact layer 24, a current blocking layer 20, a second clad layer 16, and an undoped active layer 14. This semiconductor laser device is electrically separated into three parts, part A, part B and part C by these proton implanted parts 34. Consequently, the total electric capacity of this semiconductor laser device can be reduced and the high frequency characteristics can be improved.
|
