MEMORY CELL DEVICE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a memory cell device advantageously having highly packed ferroelectric memory cells that can be manufactured easily and reliably. SOLUTION: A first transistor and a trench channel stop region 22 are disposed along the bottom part of trenches 1a to 1c in the lower region. A second transistor and a web channel stop region 24 are disposed along a crown-shaped web in the upper region. The transistors are off-set in the longitudinal direction, and the source and drain regions of the first and second transistors are disposed alternately in the horizontal direction of the upper surface of the substrate. Word lines are provided horizontally on the upper surface of the substrate. Bit lines are provided diagonally on the upper surface of the substrate. A ferroelectric capacitor is provided to be connected to the drain region of the selected transistor via a capacitor contact.