| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor wafer, which is capable of effectively eliminating polysilicon and silicon oxide on the peripheral part of a semiconductor wafer without residues. SOLUTION: A chamfer working surface of a semiconductor wafer 1 is worked through polishing, and roughness (Ra) of the surface is set to be at most 400Å. A polysilicon film 2 is formed on the surface of the semiconductor wafer 1, whose chamfer working surface is worked by polishing. The chamfer working surface of the semiconductor wafer 1 on which the polysilicon film 2 is formed is polished, and the polysilicon film 2 is eliminated. Working is performed so that the roughness (Ra) of the surface is set to be at most 400Å.
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