| 摘要 |
Disclosed is a metal layer pattern forming method which easily allows lift-off. The thickness of the photoresist layer is not less than double the thickness of the metal layer, and the maximum temperature that the surface of the substrate to be processed attains ranges from 100 DEG C. to 150 DEG C. Through appropriate improvement of the quality of the photoresist layer, bonding to the background is prevented and the lift-off is facilitated.
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