| 摘要 |
Temperature nonuniformity across a semiconductor wafer during both the transient and steady state of a typical rapid thermal processing (RTP) cycle has been a deterrent in using RTP in many ULSI unit processes. The present invention consists of a three-dimensional mathematical model to study the temperature variation across a wafer in an RTP oven for given heating element power settings, during both the transient and steady state of a typical thermal cycle and control a heating element by a computer program. The validity of various models have been checked by performing a series of oxidation experiments.
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