| 摘要 |
PURPOSE: To increase the laser luminance at the cleavage end plane of a window construction by forming etched grooves in a buried regrown layer and an impurity diffusion layer, when grooves are formed by etching cleavage-scheduled areas of a semiconductor layer. CONSTITUTION: On a substrate 1, a buffer layer 2, a clad layer 3, a guide layer 4, AlGaAsSCH layers 5 and 7, a strain quantum well active layer 6, a guide layer 8, a clad layer 9, and a contact layer 10 are grown by an epitaxial crystal growing apparatus. The contact layer 10 and the clad layer 9 are patterned and etching-processed by photolithography, and ridges 11 1.5-3μm wide and appropriately deep are formed. Next, patterning by photolithography is performed excluding photowaveguide path sections and cleavage guide grooves 12 are etched up to the substrate 1. An insulating film 14 composed of SiO2 is sputtered to the whole surface, and SiO2 on the ridges 11 is etched off, and electrodes 15 and 16 are formed. And it is cleawed along the cleavage grooves 12. Consequently, it becomes possible to reduce thc cost of products of good precision.
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