发明名称 |
LITHOGRAPHIC MASK AND FORMATION METHOD OF PATTERN |
摘要 |
<p>PURPOSE: To provide a mask capable of preventing the occurrence of a bright spot in an image on a substrate. CONSTITUTION: Plural phase shifting areas 24, 26, 28 are arranged by a matrix of parallel rows and columns having edges separated at an interval less than a distance separating the images of the edges, having different optionally selectable angular directions (non-parallel and parallel) on a substance not shifting a phase and capable of easily writing a phase shifting area on an image surface by an optional pattern. At least one of the phase shifting areas 24, 26, 28 constitutes a connecting phase shifting area 28 having an edge separated from the edge of its adjacent phase shifting area within a minimum distance to form a pattern by a continuous body of photoresist covering an area corresponding to the phase shifting area by the exposure of the mask 10b.</p> |
申请公布号 |
JPH06317893(A) |
申请公布日期 |
1994.11.15 |
申请号 |
JP19940049092 |
申请日期 |
1994.03.18 |
申请人 |
INTERNATL BUSINESS MACH CORP <IBM> |
发明人 |
FUIRITSUPU JIYOO BUROTSUKU;JIYATSUKURIN AN FURANKURIN;FURANKURIN MAAKU SHIERENBERUGU;JIUN TEIISEI |
分类号 |
G03F1/34;G03F7/20;(IPC1-7):G03F1/08 |
主分类号 |
G03F1/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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