发明名称 PHOTORESIST MATERIAL BASED ON POLYSTYRENE
摘要 Compounds of the formula (I) <IMAGE> in which R1 is hydrogen, methyl or halogen, n is 2 or 3 and R is C1-C6-alkyl, benzyl, 2-tetrahydrofuryl, 2-tetrahydropyranyl, C1-C6-alkoxycarbonyl, phenoxycarbonyl or benzyloxycarbonyl, or, if two of the substituents OR are in the ortho position with respect to one another, two radicals R together form an ethylene group which is optionally substituted by up to four C1-C6-alkyl groups or form a C2-C6-alkylidene group, can be polymerised, optionally in the presence of other unsaturated comonomers, to form polymers having a molecular weight Mw of 10<3> to 10<6>. These polymers are suitable for producing positive-working photoresists having high resolution and very good contrast.
申请公布号 JPH06100488(A) 申请公布日期 1994.04.12
申请号 JP19930125518 申请日期 1993.04.28
申请人 CIBA GEIGY AG 发明人 ARUFURETSUDO SUTAINMAN
分类号 C07C43/215;C07C43/225;C07C43/285;C07C43/29;C07C69/96;C07D307/20;C07D309/12;C08F12/22;C08F22/36;C08F26/00;C08F212/00;C08F212/12;C08F222/40;C08F226/02;G03F7/039;H01L21/027;H05K3/06;(IPC1-7):C07C43/215 主分类号 C07C43/215
代理机构 代理人
主权项
地址