| 摘要 |
PURPOSE:To enable to etch in a high speed the various kinds of semiconductor manufacturing materials, and moreover, to enable to check previously generation of ion damage at a dry etching device by a method wherein a magnetic field generated according to magnets is applied to the direction to meet at right angles with an electric field at usually reactive ion etching. CONSTITUTION:Gutter type electrodes 4a, 4b are arranged oppositely along the outer peripheral surface of a bell jar 1 on the outside of the bell jar 1. A permanent magnet 7a is arranged over a sample desk 2, and a permanent magnet 7b is fitted to the under surface of the sample desk 2. Reactive gas is introduced from a gas introducing port into the vacuum vessel 1, and gas in the vacuum vessel 1 is exhausted from a gas exhaust port. When a dry etching device is formed in such a construction, electrons (e) perform drift motion in space on a sample 3 according to actions of an electric field E generated by the electrodes 4a, 4b and a magnetic field B generated by the magnets 7a, 7b and to meet at right angles with the electric field, and motion length thereof is elongated substantially. Accordingly, frequency of collisions of electrons and reactive gas is increased sharply, and as a result, efficiency of ionization is enhanced sharply. |
