发明名称 HIGH FREQUENCY IONIZATION PLATING APPARATUS
摘要 PURPOSE:To carry out impedance matching of the high frequency ionization plating apparatus simply by a method wherein an exciting coil is provided in a vacuum enclosure of said apparatus and current passed to said coil is controlled. CONSTITUTION:In the vacuum enclosure 1, an evaporation source 2 for heating and evaporating a depositing substance by utilizing electron beam bombardment is placed and a substrate plate 3 applied to high negative voltage by a DC power source 11 is arranged to an upper part and a coil like RF electrode 4 ionizing evaporated particles from the evaporation source 2 is arranged therebetween. Further, a coil 16 to which exciting current is passed from a DC power source 15 is arranged through a variable resistor 14. The evaporated particles are converted to cations in a high frequency electric field due to the electrode 4 and accelerated to a direction of the substrate plate 3 charged to negative high voltage and collided to said substrate plate 3 to form a deposited layer of discharged vapor deposition particles. In this case, when impedance mismatching is generated, the current through the coil 16 is controlled by the control of the variable resistor 4 and, by controlling intensity of a magnetic field H due to the coil, the impedance alignment can be simply carried out.
申请公布号 JPS56116871(A) 申请公布日期 1981.09.12
申请号 JP19800017329 申请日期 1980.02.15
申请人 NIPPON ELECTRON OPTICS LAB 发明人 WATANABE KANJI
分类号 C23C14/32 主分类号 C23C14/32
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