| 摘要 |
<p>PURPOSE:To improve yield of single crystal pulling up and yield nad reliability of semiconductor device production by regulating a cell volume in a wall of a quartz glass crucible within a specific range. CONSTITUTION:A quartz glass crucible for pulling up a single crystal is regulated to provide a straight part 1 having <=75% height from the mouth, preferably above the initial melt surface and corresponding to 30-50% height from the mouth with 4X10<-3> to 30X10<-3>cm<3>/cm<3> cell volume in a wall and the residual straight part, a rounded part 3 and a bottom part 2 with <=4X10<-3>cm<3>/cm<3> cell volume in the wall of a layer corresponding to the thickness of 20-60% from the inner surface and 4X10<-3> to 30X10<-3>cm<3>/cm<3> in the residual layer. The direct heat radiation from a heater can be reduced without adversely affecting the single crystal ingot due to blister of bubbles, etc., during pulling up of the single crystal at a high temperature under a reduced pressure.</p> |
