| 发明名称 |
Semiconductor device having thin film resistor and method of producing same. |
| 摘要 |
<p>A semiconductor device having a thin film resistor which comprises at least chromium, silicon and nitrogen, and formed on a substrate with having a special ratio of the chemical composition, the semiconductor device having a characteristic such that variations of the resistance value thereof due to temperature variations can be effectively suppressed.</p> |
| 申请公布号 |
EP0350961(A2) |
申请公布日期 |
1990.01.17 |
| 申请号 |
EP19890112987 |
申请日期 |
1989.07.14 |
| 申请人 |
NIPPONDENSO CO., LTD. |
发明人 |
IIDA, MAKIO;MIURA, SHOJI;TERADA, KANEMITSU;BAN, HIROYUKI;YAMAMOTO, KIYOSHI;ODA, KATSUYOSHI;ISOBE, YOSHIHIKO |
| 分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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