| 摘要 |
A method for growing a high temperature super conducting single crystal is characterized by heating a mixture of powderrs composed of 20-75 wt.% rare earth elemetns (Y,HO,Gd,Yd,La), 10-54 wt.% BaCuO and 10-6 wt.% CuO at a temperature above 900 deg.C, maintaing that temperature in appropriate time and then cooling a mixture at the rate of 50 deg.C/hr and less. In the above method, during or after cooling, it is heat-treated at a temperature of 900 deg.C and below for 10min and above in oxygen atmosphere. In this method, the size and thickness of high tem,peerature super conducting single crystal are enlarged and it is suitable for the application to electric and electronic devices.
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