| 摘要 |
PURPOSE:To enable parasitic resistance of base and emitter to be decreased substantially, by forming at least base-extracting and emitter-extracting electrodes using a high-melting metal semiconductor compound, so-called silicide. CONSTITUTION:An insulating film 35 on the whole surface is etched by reactive ion etching so that it is left only at projections, whereby insulating layers 28 serving as side walls are formed. A halide of a high-melting metal (e.g. Ti, Mo or W), for example WF6, MoF6 or TiCl4 is deposited by a selective deposition process (e.g. selective CVD) so that a high-melting metal semiconductor compound layer (silicide layer) 27 is adhered only on the exposed surface of a semiconductor (of Si including polycrystalline Si). A resist layer 37 is then formed and patterned such that a window is formed at least at an emitter region. Using this resist pattern as a mask, n-type dopant ions (P, As or the like) are implanted for formation of the emitter region. In this manner, parasitic resistance at least of the base and emitter can be decreased substantially, while the manufacturing processes can be simplified.
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