| 摘要 |
PURPOSE:To prevent the mixing of a solution used for forming a first layer into a second layer thin-layer solution by carrying away a residual solution in a pre-process on a semiconductor wafer by a solution having the same composition as a subsequently contacted thin-layer solution. CONSTITUTION:A semiconductor-wafer carrier plate 20 is moved, and stopped at a position where a semiconductor wafer 9 is brought completely into contact with a thin-layer reaction solution chamber 60a, the semiconductor wafer 9 is shifted, and the semiconductor wafer 9 is covered with a thin-layer reaction solution at that time and the temperature of the wafer 9 is lowered only by 0.3 deg.C. The semiconductor-wafer carrier plate 20 is transferred similarly, cooling a growth boat, and the semiconductor wafer 9 is passed under mutually adjacent empty bathroom 70a and mother liquor 10b. A residual mother liquor 10a on the semiconductor wafer 9, to which a liquid growth process is completed in the thin-layer reaction solution chamber 60a, is washed together with carry-away and outflow to the empty bathroom of the mother liquor 10b on the passage of the wafer 9. Accordingly, the solution on the surface of the semiconductor wafer 9 is replaced with a solution 60b having the same composition as the solution on the surface of the wafer before the solution on the surface of the wafer enters just under a thin-layer reaction solution chamber 60b, thus preventing the mixing of two solutions.
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