| 摘要 |
PURPOSE:To conduct fine working, which does not damage a semiconductor substrate, without marring the accuracy of finishing of fine working by increasing fine working speed in reactive ion etching or reactive ion beam etching to 0.8mum/min or more. CONSTITUTION:A body to be treated is exposed to ion particles formed in the glow discharge plasma of an etching gas containing at least a halogen element. A means promoting the dissociation of the etching gas by high density plasma with magnetic-field discharge, high-energy ion irradiation of 1kev or more, beam irradiation, pre-discharge or the like is provided at that time. Consequently, fine working speed in reactive ion etching or reactive ion beam etching is increased to 0.8mum/min or more. Accordingly, fine working, which hardly damages a semiconductor substrate, is performed without marring the accuracy of finishing of fine working.
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