| 摘要 |
PURPOSE:To provide a low forward loss high dielectric strength semiconductor device without deteriorating the reliability of the element by a method wherein the spread of the depletion layer of the P-N junction of the semiconductor device is suppressed when a reverse bias is applied and the thickness of a low concentration layer is reduced. CONSTITUTION:As an N<+> type layer 11a is provided at the intermediate part of an N-type base layer 11 of a rectifying diode, if a depletion layer reaches the N<+> type layer 11a through an N<->1 type layer 11b when a reverse bias is applied, the spread of the depletion layer in that layer is reduced and suppressed practically. Therefore, the thickness WB of the N-type base layer 11 can be reduced so that a forward loss can be reduced. Moreover, as an N<->2 type layer 11c is provided between the N<+> layer 11a and an N<++> layer 13, even if the depletion layer reaches the N<+> type layer 11a and an avalanche current is induced, the device is not broken down and avalanche characteristics an be ensured.
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