发明名称 CONNECTION SUBSTRATE OF MICROWAVE IC ENCLOSURE
摘要 PURPOSE:To enable use at wide-range frequency without decreasing MMIC characteristics by a method wherein the part of an MMIC enclosure corresponding to the connection substrate is partly removed, thus forming a cavity by the enclosure and the connection substrate. CONSTITUTION:A metallic carrier plate that is the connection plate located at the lower end of a monolithic microwave IC (MMIC) enclosure, a dielectric substrate 14, and a back ground conductor 16 are removed into a cavity 18. This construction makes said conductor 16 forming a dummy microstrip line distant on account of the cavity 18, the microstrip line is not excited at an I/O terminal 2, and the MMIC can be stably operated without the shift of characteristic impedance. Besides, because of formation of the cavity 18 at the part surrounded by a ground conductor 3 plus a ground metallic film 9 and a through-hole 17 plus the conductor 16, the resonance frequency at the resonance part increases, and the decrease in characteristics caused by resonance can eliminate oscillation, resulting in the enlargement of the stable operating band of the MMIC.
申请公布号 JPS61183948(A) 申请公布日期 1986.08.16
申请号 JP19850023621 申请日期 1985.02.12
申请人 TOSHIBA CORP 发明人 TOMITA NAOTAKA;HORI SHIGEKAZU
分类号 H01L23/12;H01L23/66 主分类号 H01L23/12
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