| 摘要 |
PURPOSE:To increase a light voltage signal and to improve the S/N ratio by irradiating one surface of a semiconductor with DC photon rays. CONSTITUTION:The reverse surface of the semiconductor sample 1 is irradiated with short-wavelength light and a light voltage generated on the reverse surface of the sample 1 is suppressed with photon rays. Therefore, the light voltage on the reverse surface of the sample 1 is superior between light voltages detected by transparent electrodes 3 and 3' and the detected voltages are increased substantially. In this case, the entire reverse surface of the sample 1 is irradiated with the 2nd photo rays 1 at the same time, but the entire reverse surface need not be irradiated at the same time. Because the generation area of the light voltage generated by the irradiation of the photon rays 4 is limited to near the passing area of the photon rays 4 and the light voltage generation area on the reverse surface of the sample 1 is also limited to near the path of the photon rays 4. Consequently, the irradiation of the photon rays 11 may be limited to the light voltage generation area. Therefore, the photon rays 11 are converged according to the sectional area of the photon rays 11 are moved in synchronism with the movement of the photon rays 4.
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