| 发明名称 |
A double level polysilicon semiconductor structure. |
| 摘要 |
<p>In a double level polysilicon semiconductor structure, eg for a static RAM cell, a silicided outer region (42) of one portion (40) of the second level polysilicon layer serves as a conductive bus while an adjacent portion (34) serves as a resistor. The silicided outer region (42) is formed by depositing a silicide-forming metal on the one portion (40) of the second level polysilicon layer and annealing the structure. The second level polysilicon layer is undoped or only lightly doped.</p> |
| 申请公布号 |
EP0166964(A1) |
申请公布日期 |
1986.01.08 |
| 申请号 |
EP19850106583 |
申请日期 |
1985.05.29 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHAPPELL, BARBARA ALANE |
| 分类号 |
H01L27/04;H01L21/3205;H01L21/822;H01L21/8244;H01L23/52;H01L23/522;H01L23/528;H01L27/10;H01L27/11;(IPC1-7):H01L23/52 |
主分类号 |
H01L27/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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