MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To reduce defects largely by forming an amorphous silicon layer on a single crystal silicon layer and converting the amorphous silicon layer into a single crystal silicon layer. CONSTITUTION:A single crystal magnesia spinel layer 2 is formed on a silicon single crystal substrate 1, and a silicon single crystal layer 3 is further shaped. An amorphous silicon layer 4 in 0.5mum thickness is formed. The amorphous silicon layer is annealed for approximately ten min in hydrogen gas, and changed into a second silicon single crystal 4'. A third silicon single crystal layer 5 is shaped in approximately 40mum thickness at a growth rate of approximately 0.85mum/min in hydrogen gas at approximately 950 deg.C.