| 摘要 |
PURPOSE:To reduce the fluctuation of quality of amorphous silicon film, by effecting a plasma treatment with hydrogen chloride as a pre-treatment in a chamber in advance to the formation of the amorphous silicon. CONSTITUTION:Amorphous silicon is fored by a glow discharge decomposition. In advance to the formation of the amorphous silicon, a plasma treatment with hydrogen chloride is effected as a pre-treatment in the chamber. This plasma treatment is conducted by effecting a discharge treatment for 10-30min by an RF power of 10-100W while supplying hydrogen chloride gas at a rate of 50- 500sec cm, followed by the formation of hydrogen amorphous film. According to this method, it is possible to reduce the fluctuation in the quality control of the amorphous silicon film. |
