| 摘要 |
A semiconductor device includes a single crystal semiconductor material (14) having an N conductivity type region (10) and a P conductivity type region (12) which are electrically interconnected by a layer (18) of said semiconductor material in polycrystalline form doped to make an electrical contact with the N type region (10), a layer (20) of a combination of said semiconductor material and a refractory metal and a layer (24) of said semiconductor material in polycrystalline form doped to form an electrical contact with the P type region (12). |
