| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
| 摘要 |
<p>PURPOSE:To keep minority carriers away from PN junction face and improve an SN ratio by providing an impurity concentration gradient on the electron beam radiation side of the P type and N type semiconductor layer forming an electron beam input output type semiconductor novolatile memory.</p> |
| 申请公布号 |
JPS52155076(A) |
申请公布日期 |
1977.12.23 |
| 申请号 |
JP19760072544 |
申请日期 |
1976.06.18 |
| 申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
MATSUKAWA TAKAYUKI;KOYAMA HIROSHI;KAWAZU SATORU;AKASAKA YOUICHI |
| 分类号 |
H01L27/10;G11C11/34;G11C17/00;H01L21/8247;H01L29/788;H01L29/792 |
主分类号 |
H01L27/10 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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