METHOD FOR FORMING SEMICONDUCTOR DEVICE

摘要

A method for forming a semiconductor device is provided to prevent the generation of voids in a PMD(Pre-Metal Dielectric) depositing process by forming an N/P+ junction according to the selectivity of an ARC(Anti-Reflective Coating) spacer of a gate electrode. A gate electrode(204a) is formed on a semiconductor substrate(200). An LDD(Lightly Doped Drain) junction layer(206) is formed in the substrate by performing a first ion implantation on the resultant structure using the gate electrode as an ion implantation mask. An insulating layer and an ARC are sequentially formed on the resultant structure. An ARC spacer is formed at both sidewalls of the gate electrode by etching selectively the ARC. An N/P+ junction layer(212) is formed in the resultant structure by performing a second ion implantation using the gate electrode structure as an ion implantation mask. The N/P+ junction is formed according to the selectivity of the ARC spacer.