摘要 |
Prior to treating a material to be treated, a substitution gas including N2 is introduced into a treating room (22) to substitute air in the treating room (22) with a carrier gas (56). Then, a discharging gas (52), a mixture of a halogen gas or a halogen compound gas and vapor, is introduced into a discharging unit (16) where plasma is generated to produce a treating gas (54) containing a hydrogen halide gas, the carrier gas (56) is added to the treating gas (54) to form a mixture gas (58) which is then applied to the material to be treated (70) to treat the surface of the material (70). Upon completion of the surface treating, the carrier gas (56) is again introduced into the treating room (22) to substitute the gas in the treating room (22) with a substitution gas.
|
申请人 |
SEIKO EPSON CORPORATION;TAKAHASHI, KATSUHIRO;KURASHINA, OSAMU;TSUTSUI, SHOJI;MORI, YOSHIAKI |
发明人 |
TAKAHASHI, KATSUHIRO;KURASHINA, OSAMU;TSUTSUI, SHOJI;MORI, YOSHIAKI |