发明名称 SURFACE TREATING METHOD
摘要 Prior to treating a material to be treated, a substitution gas including N2 is introduced into a treating room (22) to substitute air in the treating room (22) with a carrier gas (56). Then, a discharging gas (52), a mixture of a halogen gas or a halogen compound gas and vapor, is introduced into a discharging unit (16) where plasma is generated to produce a treating gas (54) containing a hydrogen halide gas, the carrier gas (56) is added to the treating gas (54) to form a mixture gas (58) which is then applied to the material to be treated (70) to treat the surface of the material (70). Upon completion of the surface treating, the carrier gas (56) is again introduced into the treating room (22) to substitute the gas in the treating room (22) with a substitution gas.
申请公布号 WO0044961(A1) 申请公布日期 2000.08.03
申请号 WO2000JP00438 申请日期 2000.01.27
申请人 SEIKO EPSON CORPORATION;TAKAHASHI, KATSUHIRO;KURASHINA, OSAMU;TSUTSUI, SHOJI;MORI, YOSHIAKI 发明人 TAKAHASHI, KATSUHIRO;KURASHINA, OSAMU;TSUTSUI, SHOJI;MORI, YOSHIAKI
分类号 C23C8/36;H05K3/28;(IPC1-7):C23F1/12;C23F4/00;H01L21/302 主分类号 C23C8/36
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