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发明名称
晶圆结构、晶片结构及其制程
摘要
一种晶片制程,其包括下列步骤。首先,在一晶圆之多个凸块接垫与多个导线接垫上形成一球底金属层。然后,移除这些导线接垫上之球底金属层的部分厚度,以在这些导线接垫上形成一金属衬层。在每一凸块接垫之球底金属层上形成一凸块。接着,切割晶圆,以形成多个晶片结构,且每一晶片结构包括这些凸块接垫之部分与这些导线接垫之部分。基于上述,本发明能够制造出具有两种接垫的晶片结构。此外,本发明亦揭露一种晶片结构与晶圆结构。
申请公布号
TW200618139
申请公布日期
2006.06.01
申请号
TW093136831
申请日期
2004.11.30
申请人
日月光半导体制造股份有限公司
发明人
罗健文;蔡孟锦;吴宗桦
分类号
H01L21/60
主分类号
H01L21/60
代理机构
代理人
詹铭文;萧锡清
主权项
地址
高雄市楠梓加工出口区经三路26号
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