| 摘要 |
PROBLEM TO BE SOLVED: To obtain a means performing high speed access for a memory cell corresponding to an address signal in a semiconductor memory having a redundancy circuit. SOLUTION: This device is provided with a address pre-decoder 20 for selecting and driving a normal word and a redundancy control circuit 40 performing discrimination processing as to whether a redundancy word is activated or not, and they are independently controlled, respectively. Therefore, preceding control of a normal word can be performed independently of whether a redundancy word is used or not, thus operation speed of the whole device can be increased.
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