发明名称 BIOMOLECULE MEASURING DEVICE
摘要 To a biomolecule measuring apparatus, a semiconductor sensor for detecting ions generated by a reaction between a biomolecular sample and a reagent is set. The semiconductor sensor has a plurality of cells which are arranged on a semiconductor substrate, and each of which detects ions, and a plurality of readout wires. Each of the plurality of cells has an ISFET which has a floating gate and which detects ions, a first MOSFET M2 for amplifying an output from the ISFET, and a second MOSFET M3 which selectively transmits an output from the first MOSFET to a corresponding readout wire R1. Each of the plurality of cells is provided with a third MOSFET M1 which generates hot electrons in the ISFET and which injects a charge to the floating gate of the ISFET. Here, the second MOSFET and the third MOSFET are separately controlled.
申请公布号 US2016245777(A1) 申请公布日期 2016.08.25
申请号 US201415026657 申请日期 2014.10.02
申请人 HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 Kawahara Takayuki;Yanagawa Yoshimitsu;Itabashi Naoshi;Takemura Riichiro
分类号 G01N27/414 主分类号 G01N27/414
代理机构 代理人
主权项 1. A biomolecule measuring apparatus comprises a semiconductor sensor for detecting ions generated by a reaction between a biomolecular sample and a reagent, wherein the semiconductor sensor comprises: a semiconductor substrate;a plurality of cells arranged in an array form on the semiconductor substrate, each of the plurality of cells is configured to detect ions; anda plurality of readout wires arranged in the array formed by the plurality of cells, wherein each of the plurality of cells comprises: an ISFET comprising an a floating gate and configured to detect a change in ion concentration;a first MOSFET comprising a gate for receiving an output from the ISFET and configured to amplify the output from the ISFET;a second MOSFET configured to selectively transmit an output from the first MOSFET to a corresponding readout wire of the plurality of readout wires; anda third MOSFET connected to the ISFET, configured to generate hot electrons in the ISFET and to inject a charge to the floating gate of the ISFET, wherein the second MOSFET and the third MOSFET are separately controlled.
地址 Tokyo JP