发明名称 |
BIOMOLECULE MEASURING DEVICE |
摘要 |
To a biomolecule measuring apparatus, a semiconductor sensor for detecting ions generated by a reaction between a biomolecular sample and a reagent is set. The semiconductor sensor has a plurality of cells which are arranged on a semiconductor substrate, and each of which detects ions, and a plurality of readout wires. Each of the plurality of cells has an ISFET which has a floating gate and which detects ions, a first MOSFET M2 for amplifying an output from the ISFET, and a second MOSFET M3 which selectively transmits an output from the first MOSFET to a corresponding readout wire R1. Each of the plurality of cells is provided with a third MOSFET M1 which generates hot electrons in the ISFET and which injects a charge to the floating gate of the ISFET. Here, the second MOSFET and the third MOSFET are separately controlled. |
申请公布号 |
US2016245777(A1) |
申请公布日期 |
2016.08.25 |
申请号 |
US201415026657 |
申请日期 |
2014.10.02 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORPORATION |
发明人 |
Kawahara Takayuki;Yanagawa Yoshimitsu;Itabashi Naoshi;Takemura Riichiro |
分类号 |
G01N27/414 |
主分类号 |
G01N27/414 |
代理机构 |
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代理人 |
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主权项 |
1. A biomolecule measuring apparatus comprises a semiconductor sensor for detecting ions generated by a reaction between a biomolecular sample and a reagent,
wherein the semiconductor sensor comprises:
a semiconductor substrate;a plurality of cells arranged in an array form on the semiconductor substrate, each of the plurality of cells is configured to detect ions; anda plurality of readout wires arranged in the array formed by the plurality of cells, wherein each of the plurality of cells comprises:
an ISFET comprising an a floating gate and configured to detect a change in ion concentration;a first MOSFET comprising a gate for receiving an output from the ISFET and configured to amplify the output from the ISFET;a second MOSFET configured to selectively transmit an output from the first MOSFET to a corresponding readout wire of the plurality of readout wires; anda third MOSFET connected to the ISFET, configured to generate hot electrons in the ISFET and to inject a charge to the floating gate of the ISFET, wherein the second MOSFET and the third MOSFET are separately controlled. |
地址 |
Tokyo JP |