发明名称 |
Structure for preventing leakage of a semiconductor device |
摘要 |
A structure for preventing leakage of a semiconductor device is provided. The structure comprises a conductive layer, for shielding the features beneath thereof, located under a conductive line which crosses over a region having high voltage device. The conductive layer is wider than the conductive line.
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申请公布号 |
US7598585(B2) |
申请公布日期 |
2009.10.06 |
申请号 |
US20060420198 |
申请日期 |
2006.05.24 |
申请人 |
HIMAX TECHNOLOGIES LIMITED |
发明人 |
WU CHAN-LIANG |
分类号 |
H01L23/58;H01L23/552;H01L29/00 |
主分类号 |
H01L23/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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