发明名称 HIGH VOLTAGE SWITCH CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME
摘要 There are provided a high voltage switch circuit and a semiconductor memory device including the same. A high voltage switch circuit may include a switching circuit including a first depletion transistor and a first high voltage transistor, which are coupled in series between an input terminal and an output terminal, and a control signal generator for applying, to the first depletion transistor, a control signal having the same potential level as an input voltage applied to the input terminal, in response to a first enable signal and a second enable signal.
申请公布号 US2017084339(A1) 申请公布日期 2017.03.23
申请号 US201615054467 申请日期 2016.02.26
申请人 SK hynix Inc. 发明人 SON Yeong Joon;PARK Jin Su
分类号 G11C16/12;G11C16/24;G11C16/30;G11C16/08;H03K17/687;G11C16/04 主分类号 G11C16/12
代理机构 代理人
主权项 1. A high voltage switch circuit, comprising: a switching circuit configured to include a first depletion transistor and a first high voltage transistor, which are coupled in series between an input terminal and an output terminal; and a control signal generator configured to apply, to the first depletion transistor, a control signal having the same potential level as an input voltage applied to the input terminal, in response to a first enable signal and a second enable signal.
地址 Icheon-si Gyeonggi-do KR