发明名称 |
HIGH VOLTAGE SWITCH CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME |
摘要 |
There are provided a high voltage switch circuit and a semiconductor memory device including the same. A high voltage switch circuit may include a switching circuit including a first depletion transistor and a first high voltage transistor, which are coupled in series between an input terminal and an output terminal, and a control signal generator for applying, to the first depletion transistor, a control signal having the same potential level as an input voltage applied to the input terminal, in response to a first enable signal and a second enable signal. |
申请公布号 |
US2017084339(A1) |
申请公布日期 |
2017.03.23 |
申请号 |
US201615054467 |
申请日期 |
2016.02.26 |
申请人 |
SK hynix Inc. |
发明人 |
SON Yeong Joon;PARK Jin Su |
分类号 |
G11C16/12;G11C16/24;G11C16/30;G11C16/08;H03K17/687;G11C16/04 |
主分类号 |
G11C16/12 |
代理机构 |
|
代理人 |
|
主权项 |
1. A high voltage switch circuit, comprising:
a switching circuit configured to include a first depletion transistor and a first high voltage transistor, which are coupled in series between an input terminal and an output terminal; and a control signal generator configured to apply, to the first depletion transistor, a control signal having the same potential level as an input voltage applied to the input terminal, in response to a first enable signal and a second enable signal. |
地址 |
Icheon-si Gyeonggi-do KR |