| 发明名称 | Environmentally-assisted technique for transferring devices onto non-conventional substrates | ||
| 摘要 | A device fabrication method includes: (1) providing a growth substrate including an oxide layer; (2) forming a metal layer over the oxide layer; (3) forming a stack of device layers over the metal layer; (4) performing fluid-assisted interfacial debonding of the metal layer to separate the stack of device layers and the metal layer from the growth substrate; and (5) affixing the stack of device layers to a target substrate. | ||
| 申请公布号 | US9337169(B2) | 申请公布日期 | 2016.05.10 |
| 申请号 | US201414340425 | 申请日期 | 2014.07.24 |
| 申请人 | The Board of Trustees of the Leland Stanford Junior University | 发明人 | Lee Chi-Hwan;Kim Dong Rip;Zheng Xiaolin |
| 分类号 | H01L31/18;H01L23/31;H01L23/00;B05D5/00;H01L21/78 | 主分类号 | H01L31/18 |
| 代理机构 | Foley & Lardner LLP | 代理人 | Foley & Lardner LLP ;Liu Cliff Z. |
| 主权项 | 1. A device fabrication method, comprising: providing a growth substrate including an oxide layer; forming a metal layer over the oxide layer; forming a stack of device layers over the metal layer; performing fluid-assisted interfacial debonding of the metal layer to separate the stack of device layers and the metal layer from the growth substrate; and affixing the stack of device layers to a target substrate. | ||
| 地址 | Palo Alto CA US | ||