| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology for suppressing temperature rise in a semiconductor substrate without adding a new thermal insulation structure and the like in a case where annealing processing is performed to the semiconductor substrate by using laser light.SOLUTION: In a method of manufacturing a semiconductor device, a silicon carbide semiconductor substrate 10 is irradiated with laser light 50 from one principal surface side, and thereby, annealing processing is performed. In the annealing processing, the one principal surface side of the silicon carbide semiconductor substrate 10 is sprayed with an inert gas, and thus the silicon carbide semiconductor substrate 10 is cooled down. |
