发明名称 SPUTTERING APPARATUS AND SPUTTERING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a sputtering apparatus and a sputtering method, by which a thin film having a uniform thickness is formed on an end part of a substrate. <P>SOLUTION: In the sputtering method, a plurality of long and thin shaped targets are arranged side by side in a vacuum chamber in such a manner that the longitudinal directions of the targets are mutually parallel while the faces to be sputtered are located in the same plane and the side faces of the targets face each other; and a thin film is formed on a substrate by setting adjacent two targets of the plurality of long and thin shaped targets as one set, and then sputtering the targets by applying an off-voltage to at least one target of a set of the targets and alternately applying an on-voltage and an off-voltage to two targets of the set of targets. The sets of targets are arranged in one line, and when an on-voltage and an off-voltage are applied to the targets, the time for applying an on-voltage to the target located on the end side of the one line is made longer than the time for applying an on-voltage to the other target, in the set of targets located at the end of the one line. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012184479(A) 申请公布日期 2012.09.27
申请号 JP20110049389 申请日期 2011.03.07
申请人 ULVAC JAPAN LTD 发明人 OTANI YUSUKE;ARAI MAKOTO;KIYOTA JUNYA;ISHIBASHI AKIRA;HORISHITA YOSHIKUNI;ONO ATSUSHI;NAGANO SHINPEI;KASAI MASATO;SHIROGANE NOBUTOSHI
分类号 C23C14/34 主分类号 C23C14/34
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