发明名称 Semiconductor Device
摘要 A programmable analog device and an analog device that can retain data even when supply of a power supply potential is interrupted and consumes less power. In a semiconductor device, first to fourth transistors are used as switches in a unit cell including an analog element, and the output of the unit cell switches between a conducting state, a non-conducting state, and a conducting state through the analog element by controlling the potential of a first node where the first transistor and the second transistor are connected and the potential of a second node where the third transistor and the fourth transistor are connected.
申请公布号 US2015295577(A1) 申请公布日期 2015.10.15
申请号 US201514726754 申请日期 2015.06.01
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 Ohmaru Takuro
分类号 H03K19/00;H03K19/177 主分类号 H03K19/00
代理机构 代理人
主权项 1. A semiconductor device comprising: a programmable circuit comprising: a unit cell;a bit line;a unit cell selection line;an analog element selection line;an input signal line; andan output signal line, wherein: the unit cell comprises a first transistor, a second transistor, a third transistor, a fourth transistor, and an analog element, the unit cell selection line and a gate electrode of the first transistor are electrically connected to each other, the bit line, one of a source electrode and a drain electrode of the first transistor, and one of a source electrode and a drain electrode of the third transistor are electrically connected to each other, the analog element selection line and a gate electrode of the third transistor are electrically connected to each other, the input signal line, one of a source electrode and a drain electrode of the second transistor, and one of electrodes of the analog element are electrically connected to each other, the other of the electrodes of the analog element and one of a source electrode and a drain electrode of the fourth transistor are electrically connected to each other, the output signal line, the other of the source electrode and the drain electrode of the second transistor, and the other of the source electrode and the drain electrode of the fourth transistor are electrically connected to each other, the other of the source electrode and the drain electrode of the first transistor and a gate electrode of the second transistor are electrically connected to each other to form a first node, and the other of the source electrode and the drain electrode of the third transistor and a gate electrode of the fourth transistor are electrically connected to each other to form a second node.
地址 Atsugi-shi JP