发明名称 |
Semiconductor light emitting device and method for fabricating the same |
摘要 |
<p>Provided are a semiconductor light emitting device and a method for fabricating the same. The semiconductor light emitting device includes a light emitting structure (120) and a pattern (130). The light emitting structure includes a first-conductivity-type semiconductor layer, an active layer (122), and a second-conductivity-type semiconductor layer. The pattern is formed on at least one light emitting surface among the surfaces of the light emitting structure. The pattern has a plurality of convex or concave parts (130a,130b,130c) that are similar in shape. The light emitting surface with the pattern formed thereon has a plurality of virtual reference regions that are equal in size and are arranged in a regular manner. The convex or concave part is disposed in the reference regions such that a part of the edge thereof is in contact with the outline of one of the plurality of virtual reference regions.</p> |
申请公布号 |
EP2387081(B1) |
申请公布日期 |
2015.09.30 |
申请号 |
EP20110165384 |
申请日期 |
2011.05.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KO, HYUNG DUK;YANG, JUNG JA;KIM, YU SEUNG;SUNG, YOUN JOON;JUNG, SOO JIN;KIM, DAE CHEON;LEE, BYUNG KWUN |
分类号 |
H01L33/20;H01L33/38;H01L33/42;H01L33/44 |
主分类号 |
H01L33/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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