门体之改良结构,申请号TW100208529-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	门体之改良结构
摘要
申请公布号	TWM412226	申请公布日期	2011.09.21
申请号	TW100208529	申请日期	2011.05.12
申请人	周志憲新北市新店區寶橋路73巷1號5樓	发明人	周志宪新北市新店区宝桥路73巷1号5楼
分类号	E05D3/00	主分类号	E05D3/00
代理机构		代理人
主权项	一种门体之改良结构，包含：一门体；及至少一铰链，该铰链系由一固定铰座及一活动铰座枢接构成，该固定铰座设置成固定状态，该活动铰座设置在该门体之一角端的内部，使该门体能以该铰链为轴心作枢轴转动以操作为开启与关闭；其特征在于：该门体之一窄侧面之下部设有一开孔且其与该活动铰座对应，该开孔上还设有一可打开及关闭之外盖，该活动铰座系通过该开孔而设置在该门体之角端的内侧底面上。
地址	新北市新店区宝桥路73巷1号5楼

您可能感兴趣的专利

SYSTEM, METHOD AND PROGRAM FOR MAINTENANCE AND MONITORING

COMMUNICATION EQUIPMENT

TEMPERATURE COMPENSATED OSCILLATOR

LIQUID PHASE GROWING DEVICE AND LIQUID PHASE GROWING METHOD USING THE SAME

RECORDING MEDIUM DRIVING DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

MULTIBEAM SEMICONDUCTOR LASER ELEMENT

SURFACE-MOUNTED ANTENNA AND COMMUNICATION APPARATUS MOUNTING THE SAME

PARAMETER CREATION METHOD OF LARGE SIGNAL EQUIVALENT CIRCUIT MODEL OF FIELD-EFFECT TRANSISTOR USING GALLIUM ARSENIDE, SIMULATION METHOD USING THE PARAMETER CREATION METHOD, PROGRAM FOR EXECUTING THE METHODS BY COMPUTER, AND PROGRAM-RECORDED RECORDING MEDIUM

FIELD-EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF

LASER IRRADIATION STAGE, DEVICE AND METHOD FOR LASER IRRADIATION AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE

ADAPTIVE OVERCURRENT DETECTING CUTOUT ELEMENT ALLOWING SETTING OF DETECTION LEVEL

DRY ETCHING METHOD FOR TRANSPARENT CONDUCTIVE FILM

METHOD FOR EVALUATING SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, DEVICE FOR EVALUATING SEMICONDUCTOR DEVICE, AND EVALUATION PROGRAM

CACHE CONTROLLER AND COMPUTER SYSTEM EQUIPPED WITH IT

MOBILE INFORMATION TERMINAL

ADAPTIVE ARRAY FOR WIRELESS COMMUNICATION AND WIRELESS COMMUNICATION SYSTEM USING THE ADAPTIVE ARRAY

NEAR DISTANCE WIRELESS COMMUNICATION DEVICE, COMMUNICATION DEVICE AND INFORMATION PROVIDING SYSTEM