发明名称 |
METHOD OF MODIFYING SEMICONDUCTOR FILM BY LASER IRRADIATION |
摘要 |
FIELD: nanotechnology.SUBSTANCE: semiconductor film is influenced with continuous laser irradiation with quantum energy exceeding the band gap in the power range from 5 to 10 W, with a diameter of the laser beam on the film surface from 30 to 100 mcm, so that the intensity of exposure does not exceed 106 W/cm, when scanning the surface of the film at a rate of 40 to 160 mcm/s.EFFECT: invention simplifies the technical process, does not require any special equipment and enables to cover the devices with a characteristic period of location of the elements on the surface of 100 nm to 1 mcm.8 dwg |
申请公布号 |
RU2553830(C2) |
申请公布日期 |
2015.06.20 |
申请号 |
RU20130136844 |
申请日期 |
2013.08.06 |
申请人 |
FEDERAL'NOE GOSUDARSTVENNOE BJUDZHETNOE OBRAZOVATEL'NOE UCHREZHDENIE VYSSHEGO PROFESSIONAL'NOGO OBRAZOVANIJA "VLADIMIRSKIJ GOSUDARSTVENNYJ UNIVERSITET IMENI ALEKSANDRA GRIGOR'EVICHA I NIKOLAJA GRIGOR'EVICHA STOLETOVYKH" (VLGU) |
发明人 |
ANTIPOV ALEKSANDR ANATOL'EVICH;KUTROVSKAJA STELLA VLADIMIROVNA;KUCHERIK ALEKSEJ OLEGOVICH |
分类号 |
H01L21/268;B82Y40/00;H01L21/428 |
主分类号 |
H01L21/268 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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